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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
These miniature surface mount MOSFETs utilize Motorola's High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management in portable and battery- powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. * Low rDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SOT-23 Surface Mount Package Saves Board Space
MMBF0201N
Motorola Preferred Device
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 1.0 OHM
TM
3
3 DRAIN
1 2
CASE 318-07, Style 21 SOT-23 (TO-236AB) 1 GATE 2 SOURCE
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage -- Continuous Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Thermal Resistance -- Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RJA TL Value 20 20 300 240 750 225 - 55 to 150 625 260 Unit Vdc Vdc mAdc
mW C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Inc. 1995 (c) Motorola, Small-Signal Transistors, FETs and Diodes Device Data
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MMBF0201N
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 5) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD -- -- -- -- -- 0.85 0.3 0.75 -- V A (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT -- -- -- -- -- 2.5 2.5 15 0.8 1400 -- -- -- -- -- pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss -- -- -- 45 25 5.0 -- -- -- pF VGS(th) rDS(on) -- -- gFS -- 0.75 1.0 450 1.0 1.4 -- mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS -- -- IGSS -- -- -- -- 1.0 10 100 nAdc 20 -- -- Vdc Adc Symbol Min Typ Max Unit
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
MMBF0201N
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS)
1.0 VGS = 5 V
0.8
0.8
VGS = 4 V
0.6
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
125C 25C - 55C
0.4
0.2
0.2
VGS = 3 V
0
0
1
2
3
4
5
6
0
0
0.3
0.6
0.9
1.2
1.4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. On-Region Characteristics
1.5
2.4 2.0
ON-RESISTANCE (OHMS)
1.2
0.9
VGS = 4.5 V
1.5
0.6 VGS = 10 V 0.3
1.0
0.5
0 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.8 1
0
0
5 10 15 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
Figure 3. On-Resistance versus Drain Current
Figure 4. On-Resistance versus Gate-to-Source Voltage
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16 14 VDS = 16 V ID = 300 mA VGS(th) , NORMALIZED 12 10 8 6 4 2 0 0 160 450 2000 3400
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 -25 0 25 50 75 100 125 150 ID = 250 A
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance Over Temperature
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
MMBF0201N
TYPICAL ELECTRICAL CHARACTERISTICS
1.8 RDS(on) , NORMALIZED (OHMS) 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS = 4.5 V @ 100 mA VGS = 10 V @ 300 mA C, CAPACITANCE (pF)
100
80
60 Ciss
40
20
Coss Crss
-25
0
25
50
75
100
125
150
0
0
5
10
15
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. On-Resistance versus Junction Temperature
Figure 8. Capacitance
10
SOURCE CURRENT (AMPS)
1.0
0.1 125C 0.01 25C - 55C
0.001
0
0.3 0.6 0.9 1.2 SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)
1.4
Figure 9. Source-to-Drain Forward Voltage versus Continuous Current (IS)
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
MMBF0201N
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
5
MMBF0201N
PACKAGE DIMENSIONS
A L
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
BS
1 2
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
CASE 318-07 SOT-23 (TO-236AB) ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF0201N/D
*MMBF0201N/D*

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